MGZ18N65

650V GaN FET Enhancement Mode

MGZ18N65

Application
•Power adapters
•Low power SMPS
•Lighting

 

 

Datasheet

Features

Features
• 650V, 13 A, RDS(on)(typ.) = 230mΩ@VGS = 8V.
• Very low QRR
•Reduced Crossover Loss
• Easy to drive with commonly-used gate drivers
• Enables AC-DC bridgeless totem-pole PFC designs
  —Increased power density
  —Reduced system size and weight
  —Overall lower system cost
• Achieves increased efficiency in both hard- and soft switched circuits

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