650V GaN FET Enhancement Mode
MGZ18N65
Application
•Power adapters
•Low power SMPS
•Lighting
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商品特色
Features
• 650V, 13 A, RDS(on)(typ.) = 230mΩ@VGS = 8V.
• Very low QRR
•Reduced Crossover Loss
• Easy to drive with commonly-used gate drivers
• Enables AC-DC bridgeless totem-pole PFC designs
—Increased power density
—Reduced system size and weight
—Overall lower system cost
• Achieves increased efficiency in both hard- and soft switched circuits